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Table 1 Electrical parameters of CuAlO2 TFTs with different annealing temperature

From: Preparation and Characterization of Solution-Processed Nanocrystalline p-Type CuAlO2 Thin-Film Transistors

Annealing temperature (°C) Ion (A) Mobility (cm2 V−1 s−1) Ion/Ioff VT (V) SS (V) Nt (10–17 cm−2)
700 1.23 × 10−6 0.006 ± 0.004 ~ 103 − 14.7 ± 0.8 14.9 1.79
800 5.27 × 10−6 0.028 ± 0.008 ~ 103 − 9.5 ± 0.6 9.1 1.10
900 7.79 × 10−6 0.051 ± 0.011 ~ 103 − 2.9 ± 0.5 9.0 1.07
1000 1.45 × 10−5 0.098 ± 0.009 ~ 103 − 1.3 ± 0.5 8.6 1.03