Skip to main content
Account

Table 1 Electrical parameters of CuAlO2 TFTs with different annealing temperature

From: Preparation and Characterization of Solution-Processed Nanocrystalline p-Type CuAlO2 Thin-Film Transistors

Annealing temperature (°C)

Ion (A)

Mobility (cm2 V−1 s−1)

Ion/Ioff

VT (V)

SS (V)

Nt (10–17 cm−2)

700

1.23 × 10−6

0.006 ± 0.004

~ 103

− 14.7 ± 0.8

14.9

1.79

800

5.27 × 10−6

0.028 ± 0.008

~ 103

− 9.5 ± 0.6

9.1

1.10

900

7.79 × 10−6

0.051 ± 0.011

~ 103

− 2.9 ± 0.5

9.0

1.07

1000

1.45 × 10−5

0.098 ± 0.009

~ 103

− 1.3 ± 0.5

8.6

1.03

Navigation