Fig. 1From: Strain-Tunable Electronic Properties and Band Alignments in GaTe/C2N Heterostructure: a First-Principles CalculationTop and side views of (a) GaTe and (b) C2N monolayers. Top views of (c–e) α-, β-, and γ-stacking GaTe/C2N heterostructures, in which the corresponding base vectors of the heterostructures are labeledBack to article page