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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: Strain-Tunable Electronic Properties and Band Alignments in GaTe/C2N Heterostructure: a First-Principles Calculation

Fig. 2

a The projected band structure of the GaTe/C2N heterostructure with γ-stacking configuration and the corresponding total and partial density of states. b Schematic representation of type II band alignments for the carrier transfer and separation in the GaTe/C2N heterostructure, referring to the vacuum level. The redox potentials (red dashed line) of water splitting at pH =0 are shown for comparison. Band decomposed charge densities of the c VBM and d CBM of the heterostructure

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