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Fig. 6 | Nanoscale Research Letters

Fig. 6

From: Strain-Tunable Electronic Properties and Band Alignments in GaTe/C2N Heterostructure: a First-Principles Calculation

Fig. 6

a In-plane biaxial strain effects on the bandgap and strain energy of the GaTe/C2N heterostructure.The mistyrose, blue, and green regions represent the metal (M), Ind and D bandgap ranges, respectively. b The evolutions of the band-edge positions of the sublayers in heterostructure as a function of the in-plane biaxial strain. The I, II, and III regions correspond to type-I, -II, and -III band alignments, respectively

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