Fig. 11From: An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Applicationa Schematic of the cross-sectional Pt/Ga2O3 SBD and p-Cu2O/n-Ga2O3 diode. b Band diagram of the p-Cu2O/n-Ga2O3 interface. c, d Forward and reverse J–V characteristics of the SBD and p-n diode. Reprinted from ref. [71]Back to article page