Fig. 7

a Structure of the SBD device based on the HVPE-grown 7-μm-thick n⁻-Ga₂O₃ homoepitaxial drift layer on n⁺-Ga₂O₃ single crystal substrate. b Forward J–V characteristics of the device measured at 21–200 °C. c Reverse J–V at 21–200 °C (solid and dotted lines represent the experimental and simulated results, respectively). Reprinted from ref. [16]