Table 2 Basic performance parameters of reported Ga2O3 Schottky barrier diode since 2012
Device structure | n | Nd − Na | J @2 V | R s | R on | qV bi | qΦb | J s | V br | Structure | Reference |
|---|---|---|---|---|---|---|---|---|---|---|---|
(cm−3) | (A/cm2) | (mΩ·cm2) | (mΩ·cm2) | (eV) | (eV) | (A/cm2) | (V) | ||||
Pt/(100)β-Ga2O3/Ti | 1.1 | 2 × 1017 | 421 | 2.8 | 2.9 | 0.63 | 0.9 | 2 × 10−16 | ~ 200 | Wafer | Our work, 2018 IEEE EDL [63] |
Pt/(010)β-Ga 2O3/Ti | 1.1 | 2.3 × 1014 | 56 | 9 | 12.5 | 1.07 | 1.3–1.4 | 2 × 10−16 | > 40 | Wafer | Our work, 2017 APL [60] |
Ni/(100)β-(AlGa)2O3/Ti | 2.3 | 4.5 × 1018 (sub) | 7.7 (1.7 V) | 30.1 | 63.6 | – | 0.81 | – | – | Epi-layer | Xidian University, China 2018 APL [66] |
Ni/(001)β-Ga2O3/Ti | 1.03 | 3.6 × 1018 (sub) | – | – | 80 | – | 1.07 | – | 97 | Epi-layer | UF, USA 2018 IEEE Trans. Electron Devices [72] |
Mo/(001)β-Ga2O3/Ti | – | 5 6 × 1016 (5 μm) 6 × 1018 (570 μm) | ~ 200 (1 V) | – | 1.9–2.4 | ~ 0.5 | – | – | > 400 | TMBS | Novel Crystal Tecnology, Inc., Japan IWGO 2017 |
Ni/(−201)β-Ga2O3/Ti | 1.07 | 4 × 1015 (10 μm) 3.6 × 1018 (650 μm) | – | – | 1.6–25 | – | 1.22 | – | ~ 1600 | Epi-layer | UF, USA 2017 EDL [69] |
Cu/(001)β-Ga2O3/Ti | 1.1 | 6 × 1016 (7 μm) 2.5 × 1018 (350 μm) | ~ 210 (1.5 V) | – | 2.9 | 0.7–0.8 | 1.07 | – | 230 | TMBS | Novel Crystal Tecnology, Inc., Japan 2017 EDL [70] |
Ni/(001)β-Ga2O3/Ti | 1.08 | 2 × 1016 (10 μm) 3.6 × 1018 (650 μm) | – | – | 6 | – | 1.1 | – | 1016 | Epi-layer | UF, USA 2017 APL [73] |
Pt/(001)β-Ga2O3/Ti | 1.03 ± 0.02 | 1.8 × 1016 | ~ 80 | – | 5.1 | 1.32 | 1.46 | – | 1076 | Field plate | NICT, Japan 2017 APL [68] |
Ni/(010)β-Ga2O3/Sn | 1.21–3.38 | UID (2 μm) 4.1 × 1018 (650 μm) | – | – | – | – | 0.95–1.01 | – | 210 | Epi-layer | Korea, 2017 SST [74] |
Pt/α-Ga2O3/Ti | – | – | 3000 | – | 0.1 | 1.5–1.6 | – | – | 531 | Film | FLOSFIA, Inc., Japan 2016 APE [18] |
– | – | 1350 | – | 0.4 | 1.5–1.6 | – | – | 855 | Film | ||
Ni/(−201)β-Ga2O3/Ti | 1.19 | 2.6 × 1016 | < 1 | 51.8 | – | – | 1.04–1.12 | – | – | – | USA, 2016 SST [75] |
Pt/(001)β-Ga2O3/Ti | 1.03 ± 0.01 | 1 × 1016 | > 100 | – | 3 | 1.0–1.1 | 1.12 ± 0.03 | – | 500 | Epi-layer | NICT, Japan 2016 APL [16] |
Pt/(010)β-Ga2O3/Ti | 1.04–1.06 | 3 × 1016 | ~ 100 | – | 7.85 | 1.23 | 1.3–1.5 | 6.5 × 10−19 | 150 | Wafer | Japan, 2013 EDL [62] |
– | 5 × 1016 | > 100 | – | 4.3 | 1.23 | – | 9 × 10−19 | 120 | Wafer | ||
Cu/(−201)β-Ga2O3/Ti | 1.2–1.4 | 8 × 1017 | ~ 10 | – | – | 1.44 | 0.88–0.95 | – | – | Wafer | Germany, 2013 PSS [76] |
Au/(100)β-Ga2O3 | 1.02–1.09 | 6 × 1016− 8 × 1017 | < 1 | – | – | – | 1.07 ± 0.05 | – | – | Wafer | Germany, 2012 APL [77] |