Account

Table 2 The calculated defect formation energies (eV) in bulk XAs (X = Al or Ga) under As-rich and X-rich conditions. The minimum values are indicated in italic

From: First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility

Defect	GaAs		AlAs
Defect	As-rich	Ga-rich	As-rich	Al-rich
V_X	2.56	3.17	3.36	4.25
V_As	3.31	2.7	4.05	3.16
X_int	3.23	2.61	4.33	3.44
As_int	5.20	5.81	5.14	6.03
X_As	2.31	1.49	4.78	3.0
As_X	1.57	2.79	1.46	3.24

V_X: (X = Ga, Al, or As) X vacancy; X_int: X interstitial; X_As: X occupying the As lattice site; As_X: As occupying the X lattice site

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