Fig. 4
From: Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter
Temperature-dependent electric properties of a p-type multi-layered MoTe2 transistor. a Transfer characteristics of MoTe2 transistor at Vsd = 1 V as a function of temperature. b On-current, off-current, and on-off current ratio as a function of temperature. c Arrhenius plot of the source-drain current as a function of temperature at Vsd = 1 V and Vbg = − 20 V and 20 V, respectively. d Maps of effective Schottky barrier heights ΦSB as a function of back-gate voltage