Fig. 6
From: Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter
N-type multi-layered MoTe2 transistor properties in vacuum. a RT transfer characteristics of MoTe2 transistor at Vsd = 1 V. b RT output characteristics of MoTe2 transistor at different back-gate voltage. c Transfer characteristics of MoTe2 transistor as a function of temperature. d On-current, off-current, and on-off current ratio of MoTe2 transistor as a function of temperature. e Arrhenius plot of the Isd at Vsd = 1 V and Vbg = − 20 V and 20 V, respectively. f Maps of effective Schottky barrier heights ΦSB as a function of Vbg