Fig. 7From: Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in InverterTe vacancy in MoTe2. a 4 × 4 ML MoTe2 supercells in an ideal phase and with a Te vacancy. The vacancy site is marked in yellow. b Partial density of states (PDOS) of Mo site adjacent to Te vacancy and nearest Te site to a Te vacancy in ML MoTe2 (red solid), compared to the PDOS in an ideal ML (black dashed)Back to article page