Fig. 9
From: Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter
Complementary inverter properties based on p-type and n-type multi-layered MoTe2 transistor in 8 × 10−5 mbar vacuum. a Inverter diagram composed of p-type and n-type MoTe2 transistors. Transfer characteristics of p-type (b) and n-type (c) MoTe2 transistor from the inverter. d VTC curves of the inverter for VDD values varying from 1 to 5 V. e VTC curves (black lines) and their mirrors (red lines) at VDD = 5 V. f VIN-dependent voltage gains of the inverter at VDD = 2 V, 3 V, 4 V, and 5 V