Fig. 14From: Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect TransistorCapacitance of TGTFET versus Vg under a Vd = 0 V and b Vd = 0.5 V. Capacitance of UTFET versus Vg under c Vd = 0 V and d Vd = 0.5 V. Capacitance of LTFET versus Vg under e Vd = 0 V and f Vd = 0.5 VBack to article page