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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: Effect of Bilayer CeO2−x/ZnO and ZnO/CeO2−x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory

Fig. 2

Devices depict the typical bipolar behavior. a Positive (+ve) forming and subsequent switching operation and b negative (−ve) forming and switching operation of the Ti/CeO2−x/ZnO/Pt hetrostructures. c +ve forming and switching operation and d −ve forming and switching operation of Ti/ZnO/CeO2−x/Pt memory devices. Arrows indicate switching directions

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