Fig. 4From: Effect of Bilayer CeO2−x/ZnO and ZnO/CeO2−x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile MemoryEndurance characteristics of a positively electroformed and b negatively electroformed Ti/CeO2−x/ZnO/Pt heterostructure memory devices. c Positively electroformed and d negatively electroformed Ti/ZnO/CeO2−x/Pt heterostructure memory devicesBack to article page