Fig. 5From: Effect of Bilayer CeO2−x/ZnO and ZnO/CeO2−x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile MemoryRetention characteristics of a positively electroformed Ti/CeO2−x/ZnO/Pt heterostructure memory devices and b negatively electroformed Ti/ZnO/CeO2−x/Pt heterostructure memory devices at room temperatureBack to article page