Fig. 6From: Effect of Bilayer CeO2−x/ZnO and ZnO/CeO2−x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile MemorylogI-V1/2 characteristics in the HRS of SET-state. a For Ti/CeO2−x/ZnO/Pt. b For Ti/ZnO/CeO2−x/Pt heterostructure memory devices. Temperature dependence of LRS and HRS of c Ti/CeO2−x/ZnO/Pt and d Ti//ZnO/CeO2−x/Pt heterostructure memory devicesBack to article page