Fig. 8From: Effect of Bilayer CeO2−x/ZnO and ZnO/CeO2−x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile MemorySchematic diagrams for the conduction band offset of a, b Ti/ZnO/CeO2−x/Pt and c, d Ti/CeO2−x/ZnO/Pt heterostructure memory devices. Arrows represent electrons drift direction according to switching polaritiesBack to article page