Fig. 8From: Enhanced near-infrared absorber: two-step fabricated structured black silicon and its device applicationDetector image (a), dark current (b), I–V curve under 1060 nm wavelength illumination (c), and responsivities of two different detectors (d): device 1 from ref. [22] and device 2 based on the results of present paper. The inset of d shows the device structureBack to article page