Fig. 2From: Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cella Cross-section TEM image of Cu/ZnO/ITO device. b Schematic of Cu/ZnO/ITO device. Typical I-V curve and resistance calculation of (c) control, (d) ST1, (e) ST3, and (f) ST9 devices. g Forming curves of the fabricated devicesBack to article page