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Table 1 Fitting parameters in Sb2Se2Te nanosheets

From: The Extremely Enhanced Photocurrent Response in Topological Insulator Nanosheets with High Conductance

Thickness

202 nm

178 nm

58 nm

β (A /W)

5.5

641

6.7

Ioff (A)

6.67×10−6

5.36×10−4

3.80×10−6

β/G (A /WS)

1.37×105

1.06×105

0.96×105

α

1

1

1

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