Skip to main content
Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection

Fig. 3

Connectivity and electrical properties of ZnO NW network by control of pulling speed. a ZnO NWs network FET electrical properties of pulling speed 0.5 and 2 mm min−1. Typical current-voltage characteristics of devices fabricated at different pulling speeds of 0.5 and 2 mm min−1. The network channels showed Schottky contact from − 1 to 1 V. The insets are SEM images of network channel at 0.5 (top left) and 2 (bottom right) mm min−1. The scale bars are 10 μm for both cases. b Current-voltage characteristics of various back-gate voltage. Vg ranged from − 60 V to 60 V in 20 V steps. c Ids vs Vg relations of ZnO NWs network channel fabricated at various Vds. Vds ranged from 0 to 7 V in 1 V steps

Back to article page