Fig. 11From: On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting DiodesWPE as a function of the injection current for LEDs A, D1, D2, D3, D4, and D5. Inset figure shows the WPE and EQE for the studied LEDs with various doping concentrations of the n-Al0.40Ga0.60N layer at the current density of 170 A/cm2Back to article page