Fig. 12From: On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodesa Lateral hole distribution in the last quantum well, b hole concentration profiles, and c radiative recombination rate profiles in the MQW region for LEDs A, N1, N2, N3, and N4 at the current density of 170 A/cm2. The plotted curves for panels b and c are purposely shifted by 2 nm for better resolutionBack to article page