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Table 2 The electron and hole mobilities in ΓM and ΓK direction. The subscripts “e” and “h” refer to electron and hole, respectively. Unit is cm2/(V s)

From: Theoretical Study on Carrier Mobility of Hydrogenated Graphene/Hexagonal Boron-Nitride Heterobilayer

 

μe (ΓM)

μh (ΓM)

μe (ΓK)

μh (ΓK)

100%

95.18

162.71

129.22

197.02

25% pattern I

1126.39

70.73

8985.85

2960.80

25% pattern II

53.21

69.54

118.03

59.73

25% pattern III

64.50

6.05

341.81

19.86

6.25% pattern I

1756.48

12,520.27

23,470.98

2158.01

6.25% pattern II

4856.81

3539.15

5710.03

4326.59

Stacking pattern I

84.33

167.47

114.49

219.91

Stacking pattern II

92.37

181.78

125.41

214.30

Stacking pattern III

93.84

1026.06

127.40

1227.19

Stacking pattern IV

98.66

1147.82

133.95

1436.75

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