Table 2 The electron and hole mobilities in ΓM and ΓK direction. The subscripts “e” and “h” refer to electron and hole, respectively. Unit is cm2/(V s)
From: Theoretical Study on Carrier Mobility of Hydrogenated Graphene/Hexagonal Boron-Nitride Heterobilayer
μe (ΓM) | μh (ΓM) | μe (ΓK) | μh (ΓK) | |
---|---|---|---|---|
100% | 95.18 | 162.71 | 129.22 | 197.02 |
25% pattern I | 1126.39 | 70.73 | 8985.85 | 2960.80 |
25% pattern II | 53.21 | 69.54 | 118.03 | 59.73 |
25% pattern III | 64.50 | 6.05 | 341.81 | 19.86 |
6.25% pattern I | 1756.48 | 12,520.27 | 23,470.98 | 2158.01 |
6.25% pattern II | 4856.81 | 3539.15 | 5710.03 | 4326.59 |
Stacking pattern I | 84.33 | 167.47 | 114.49 | 219.91 |
Stacking pattern II | 92.37 | 181.78 | 125.41 | 214.30 |
Stacking pattern III | 93.84 | 1026.06 | 127.40 | 1227.19 |
Stacking pattern IV | 98.66 | 1147.82 | 133.95 | 1436.75 |