Fig. 1From: Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dotsa The schematic diagrams of the SQD sample structure. b 0.5 μm × 0.5 μm AFM images of the InGaAs SQDs grown at different temperatures. c The average height and d areal density of the InGaAs SQDs are plotted with respect to the growth temperatureBack to article page