Fig. 3From: Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dotsa PL spectra as a function of the excitation intensity for the sample grown at 505 °C. b~f The integrated PL intensities of the BQDs and SQDs as functions of the excitation intensity at 10 K, 77 K, 150 K, 220 K, and 295 K respectively. g, h The power law parameters α and η for BQDs and SQDs at different temperature. Here, the lines are only guides-to-the-eyeBack to article page