Fig. 4From: Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dotsa Integrated PL intensities of the BQDs and the SQDs as functions of temperature at different excitation intensities. b Arrhenius plot with an excitation intensity 3 W/cm2 for the BQDs and the SQDs. The PL peak energy of c the BQDs and d the SQDs. The FWHM of e the BQDs and f the SQDs as functions of temperatureBack to article page