Fig. 5From: Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dotsa The integrated PL intensity ratio (SQDs/BQDs) with respect to excitation intensity. b The integrated PL intensity ratio with respect to temperature for both low and high excitation intensity of 3 W/cm2 and 95 W/cm2Back to article page