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Fig. 1 | Nanoscale Research Letters

Fig. 1

From: Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Fig. 1

a Cross sectional bright field STEM image of Mg implanted GaN sample obtained along [11\( \overline{2} \)0] axis and b corresponding depth profile of Mg obtained using SIMS. For better visualization of the defects and their relation to Mg concentration, imaging is carried out under off-zone axis condition as shown in c. Mg profile corresponding to c is shown in d in linear scale where line defects are observed in a narrow region having highest Mg concentration

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