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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Fig. 2

a Cross sectional bright field STEM image of Mg implanted GaN sample obtained in off-zone axis condition to strengthen the defects contrasts. Magnified view of marked region in (a) is presented in (b) where four different kind of defects labelled as A, B, C and D are observed. High-resolution TEM image of the pyramidal domains labelled as A in (b) is shown in (c) with schematic representation at right bottom. The distorted lattice on the pyramidal domain are representing by squeezing (c) as shown in (d). High-resolution TEM image of one typical C or D type defects is presented in (e) with squeezed image in (f), showing strain field contrast around the defect

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