Fig. 3From: Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substratesa Cross-sectional bright field STEM image of Mg-implanted bulk GaN sample for analyzing type B defects which appear like truncated pyramids or trapezoidal shape. b represents the image taken by tilting the sample at 10° around the axis perpendicular to c-axis where a different contrast is observed at the edges of these defectsBack to article page