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Fig. 4 | Nanoscale Research Letters

Fig. 4

From: Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Fig. 4

a Cross-sectional STEM image of Mg implanted GaN sample showing an individual type “B” defect. Points 1 and 2 represents regions where EDS measurements are carried out and resulting EDS spectra are shown in b. EDS spectra in the energy range of 1.19–1.40 keV is plotted in b with inset showing the full EDS spectra with Ga and N peaks. c and d present STEM image and corresponding Mg map of a similar Mg-implanted bulk sample showing the presence of Mg in these types of defects

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