Fig. 5From: Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substratesa Cross sectional bright field STEM image of Mg-doped bulk GaN sample obtained along [112 ̅0] axis and b corresponding depth profile of Mg obtained using SIMS. Dot-like defects are found to be uniformly distributed across the sampleBack to article page