Fig. 3
From: One-Step Mask-Based Diffraction Lithography for the Fabrication of 3D Suspended Structures
The mask patterns and simulation results in the photoresist. a The light intensity distributions below the photo mask under d = 1 μm, 1.5 μm, 2 μm, 2.5 μm, 3 μm, 3.5 μm, and 4 μm, where d is the width of the line pattern. The mask pattern for b suspended beams, c meshes, and d meshes with stacked line patterns and the corresponding light intensity distributions under z = 5 μm, 10 μm, 15 μm, and 20 μm in the photoresist. Here, z is the distance between the section plane and photo mask