Fig. 4
From: One-Step Mask-Based Diffraction Lithography for the Fabrication of 3D Suspended Structures
The suspended photoresist beams resulted from one-step diffraction lithography with different line width d using the mask pattern in Fig. 3b. NR26-25000P photoresist beams under a d = 2 μm, b 2.5 μm, c 3 μm, d 3.5 μm, e 4 μm, and f 5 μm; SU-8 2100 photoresist beams under g d = 2 μm, h 2.5 μm, i 3 μm, j 3.5 μm, and k 4 μm; l the functions of exposure thickness vs. line width in simulation without absorption, NR26-25000P, and SU-8 2100 and simulations with absorption coefficient α = 0.0374 μm−1, where the inset shows the tilted view of SU-8 suspended beams. The thickness of the beams increases with the line width of the mask pattern. The scale bars are 50 μm