Fig. 5
From: One-Step Mask-Based Diffraction Lithography for the Fabrication of 3D Suspended Structures
Different cross connection patterns with NR26-25000P. a–c Three cross connection patterns on the mask and the corresponding simulation results at z = 15 μm, where the line width is 2 μm with spacing of 2 μm and z is the distance between the section plane and photo mask. d–f The textures on the obtained photoresist cross connection and the broad beams, where the scale bars are 20 μm. g The suspended meshes with supporting pillars. h The suspended meshes with thin supporting pillars, where the pillars result from the dense cross connection patterns with high ratio. i The full suspended mesh patterns. The scale bars in g–i are 100 μm