Fig. 1
From: Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes
Schematic cross-section of the front-illuminated SAGCM APDs. Presents the schematic cross-section of the top-illuminated SAGCM InGaAs/InAlAs APD. It includes structure, materials, doping, and thickness. From bottom to top, the layers are sequentially named as substrate, contact layer, cladding layer, multiplication layer, charge layer, grading layer, absorption layer, grading layer, cladding layer, and contact layer