Fig. 7From: Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche PhotodiodesField in the absorption layer with different Ncharge. The values of Ncharge is 4.5*1017 cm− 3 (black square), 6.8*1017 cm−3 (black triangle). Figure 6 presents the electric-field distribution of absorption for different doping concentrations in the charge layer (Wcharge = 50 nm)Back to article page