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Table 1 Material parameters used in the simulation of InGaAs/InAlAs SAGCM APDs [33]

From: Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes

Parameter

Units

Electron

Hole

Energy band gap (InGaAs)

eV

0.75

 

Energy band gap (InAlAs)

eV

1.46

 

Impact coefficient a (InAlAs)

cm−1

2.1*106

2.4*106

Impact coefficient b (InAlAs)

V/cm

1.62*106

1.86*106

Effective threshold energy (InAlAs)

eV

3.2

3.5

SRH lifetime (InAlAs)

s

1*10−6

1*10−6

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