Table 1 Material parameters used in the simulation of InGaAs/InAlAs SAGCM APDs [33]
From: Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes
Parameter | Units | Electron | Hole |
---|---|---|---|
Energy band gap (InGaAs) | eV | 0.75 | |
Energy band gap (InAlAs) | eV | 1.46 | |
Impact coefficient a (InAlAs) | cm−1 | 2.1*106 | 2.4*106 |
Impact coefficient b (InAlAs) | V/cm | 1.62*106 | 1.86*106 |
Effective threshold energy (InAlAs) | eV | 3.2 | 3.5 |
SRH lifetime (InAlAs) | s | 1*10−6 | 1*10−6 |