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Fig. 1 | Nanoscale Research Letters

Fig. 1

From: Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH

Fig. 1

VLS-grown GaP(N) nanowires on GaP(111)B. UDMH:TBP ratio and temperature were varied from 0 to 9 and 500 to 550 °C, respectively. The growth time was always 16 min. All overview and close-up scans were taken at 30° tilt and have the same scale, respectively, with the measuring bars being 2 μm or 200 nm. In (g′), (f’), and (k’) enlarged close-ups are shown for a clear visibility of the surface

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