Fig. 3From: Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMHμ-Raman spectra of GaP(N) NWs grown with UDMH:TBP ratios ranging from 0.1 to 3. A lattice-matched GaPN layer on Si acts as reference (orange). For the deconvolution of the NLVM component Pseudo Voigt functions (of same shape) were used. The sharp line at 800 cm−1 is a measurement artefactBack to article page