Fig. 1From: Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Filma The Sn-doped β-Ga2O3 substrate with the thickness of 300 μm. b The Schottky anode electrodes formed on the front side with diameters of 100 μm. c The structure of the schematic across section of the β-Ga2O3 SBD. d XRD rocking curve and e AFM image of the β-Ga2O3 drift layer mechanically exfoliated from (100) β-Ga2O3 substrateBack to article page