Fig. 2From: Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Filma Forward I-V characteristics of Mo/β-Ga2O3 Schottky barrier diodes at different temperatures. b Temperature dependence of the ideality factor and Schottky barrier height of β-Ga2O3 Schottky barrier diode. c Plots of ϕap versus q/2kT and modified Richardson plot versus 1/kT for the β-Ga2O3 Schottky barrier diodesBack to article page