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Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film

Fig. 5

a Reverse I-V characteristics of Mo/β-Ga2O3 Schottky barrier diodes at different temperature. b Temperature dependence of 1/C2 characteristics of the Mo/ β-Ga2O3 Schottky barrier diodes. The electric field dependence analysis of Mo/β-Ga2O3 Schottky contact with different mechanism. c Poole–Frenkel mechanism (I/E) versus E1/2 and d Schottky mechanism ln(I/T2) versus E1/2

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