Fig. 3
From: RTN and Annealing Related to Stress and Temperature in FIND RRAM Array
a Illustration of the increasing pulse width used to perform set/reset operation. After the first pulse of 1 μs, a read operation is performed to evaluate whether the read current reach the target levels of 3 μA for LRS, and less than 1 μA for HRS. If the required state is not achieved, the next pulse is given. The pulse width is extended by an order every ten pulses. b Comparison of read current at room temperature sampled at VSL = VWL = 0.8 V and VBL = 0, with sampling rate of 500 Hz, before and after being cycled 100 times