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Fig. 5 | Nanoscale Research Letters

Fig. 5

From: RTN and Annealing Related to Stress and Temperature in FIND RRAM Array

Fig. 5

a Comparing the distribution of the |ΔI/I| of 50 samples before and after stress. It can be seen that cells exhibit overall larger ΔI/I after stress. The percentile values of the box plot from bottom to top represent the 25, 50, and 75 percentile points, respectively, while the whiskers indicates the maximum and minimum values. b A histogram of normalized read current distribution of a cell measured at fresh and after 10 and 100 cycles. This shows that once a FIND RRAM undergoes long cycling stress, its bit cell current can be subject to more drastic fluctuation due to the addition of RTN

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