Fig. 1From: High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientationa Process sequence showing the key steps employed to fabricate the Ge pMOSFETs with different tSi. b Cross-sectional schematic of a Ge pMOSFET with SiO2 IL. c Top-view microscope image of a fabricated Ge pMOSFETBack to article page