Fig. 10From: High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientationa μeff for the Ge pMOSFETs in this work vs. the published results for relaxed Ge pMOSFETs. b, c Benchmarking of μeff extracted at Qinv = 5 × 1012 and 1 × 1013 cm−2, respectively, of the Ge pMOSFETs with the different CET values [18, 19]Back to article page