Fig. 3From: High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientationa Measured IDS-VGS and IG-VGS curves of (001)-, (011)-, and (111)-oriented Ge pMOSFETs with 0.9 nm tSi showing the excellent transfer characteristics. b IDS-VDS curves measured at different VGS-VTH for the devicesBack to article page